october 2013 ?2001 fairchild semiconduc tor corporation fqt3p20 rev. c0 www.fairchildsemi.com 1 p-channel qfet ? mosfet -200 v, -0.67 a, 2.7 fqt3p20 ? p-channel qfet ? mosfet fqt3p20 description this p-channel enhancement mode power mosfe t is produced using fairchild semiconductors proprietary planar stripe and dmos technology. this advanced mosfet technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. these devices are suitable for switched mode power supplies, audio amplifier, dc motor control, and variable switching power applications. features ? -0.67 a, -200 v, r ds(on) = 2.7 ? (max.) @v gs = 10 v , i d = 0.335 a ? low gate charge ( typ. 6.0 nc) ? low crss ( typ. 7.5 pf) absolute maximum ratings t c = 25c unles s otherwise noted. thermal characteristics symbol parameter FQT3P20TF unit v dss drain-source voltage -200 v i d -0.67 a drain current - continuous (t c = 25c) - continuous (t c = 70c) -0.53 a i dm drain current - pulsed (note 1) -2.7 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 150 mj i ar avalanche current (note 1) -0.67 a e ar repetitive avalanche energy (note 1) 0.25 mj dv/dt peak diode recovery dv/dt (note 3) -5.5 v/ns p d power dissipation (t c = 25c) 2.5 w - derate above 25c 0.02 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds 300 c symbol parameter FQT3P20TF unit r ja thermal resistance, junction-to-ambient 50 c / w g s d sot-223 d d d s g g
package marking and ordering information device marking device package reel size tape width quantity fqt3p20 FQT3P20TF sot-223 13" 12 mm 2500 units ?2001 fairchild semiconductor corporation fqt3p20 rev. c0 www.fairchildsemi.com 2 fqt3p20 ? p-channel qfet ? mosfet (note 4) (n ote 4) electrical characteristics t c = 25c unless otherwise noted. notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 500mh, i as = -0.67a, v dd = -50v, r g = 25 ?, starting t j = 25c 3. i sd -2.8a, di/dt 300a/ s, v dd bv dss, starting t j = 25c 4. essentially independent of operating temperature symbol parameter test conditions min typ max unit off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = -250 a -200 -- -- v ? b vdss / ? t j breakdown voltage temperature coefficient i d = -250 a, referenced to 25c -- -0.18 -- v/c i dss zero gate voltage drain current v ds = -200 v, v gs = 0 v -- -- -1 a v ds = -160 v, t c = 125c -- -- -10 a i gssf gate-body leakage current, forward v gs = -30 v, v ds = 0 v -- -- -100 na i gssr gate-body leakage current, reverse v gs = 30 v, v ds = 0 v -- -- 100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = -250 a -3.0 -- -5.0 v r ds(on) static drain-source on-resistance v gs = -10 v, i d = -0.335 a -- 2.06 2.7 ? g fs forward transconductance v ds = -40 v, i d = -0.335 a -- 0.7 -- s dynamic characteristics c iss input capacitance v ds = -25 v, v gs = 0 v, f = 1.0 mhz -- 190 250 pf c oss output capacitance -- 45 60 pf c rss reverse transfer capacitance -- 7.5 10 pf switching characteristics t d(on) turn-on delay time v dd = -100 v, i d = -2.8 a, r g = 25 ? -- 8.5 25 ns t r turn-on rise time -- 35 80 ns t d(off) turn-off delay time -- 12 35 ns t f turn-off fall time -- 25 60 ns q g total gate charge v ds = -160 v, i d = -2.8 a, v gs = -10 v -- 6.0 8.0 nc q gs gate-source charge -- 1.7 -- nc q gd gate-drain charge -- 2.9 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- -0.67 a i sm maximum pulsed drain-source diode forward current -- -- -2.7 a v sd drain-source diode forward voltage v gs = 0 v, i s = -0.67 a -- -- -5.0 v trr reverse recovery time v gs = 0 v, i s = -2.8 a, di f / dt = 100 a/ s -- 100 -- ns qrr reverse recovery charge -- 0.34 -- c
?2001 fairchild semiconductor corporation fqt3p20 rev. c0 www.fairchildsemi.com 3 fqt3p20 ? p-channel qfet ? mosfet 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 -1 10 0 25 150 notes : 1. v gs = 0v 2. 250 s pulse test -i dr , reverse drain current [a] -v sd , source-drain voltage [v] 2 6 4 1 0 10 -1 10 0 notes : 1. v ds = -40v 2. 250 s pulse test -55 150 25 -i d , drain current [a] 4 -v gs , gate-source voltage [v] 1 0 234 3 67 0 2 4 6 8 10 12 v ds = -100v v ds = -40v v ds = -160v note : i d = -2.8 a -v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 0 10 1 0 100 200 300 400 c iss = c gs + c gd (c ds = shorted) = c gd ds c oss = c + c gd c rss notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] 10 -v ds , drain-source voltage [v] 2 0 4 8 6 0 2 4 6 8 10 note : t j = 25 v gs = - 20v v gs = - 10v r ds(on) [ ? ], drain-source on-resistance -i d , drain current [a] 10 -1 0 10 1 10 -1 10 0 v gs top : -15.0 v -10.0 v -8.0 v -7.0 v -6.5 v -6.0 v bottom : -5.5 v notes : 1. 250 s pulse test 2. t c = 25 -i d , drain current [a] 10 -v ds , drain-source voltage [v] typical characteristics figure 5. capacitance characteristics figure 6. gate charge characteristics figure 3. on-resistance variation vs. drain current and gate voltage figure 4. body diode forward voltage variation vs. source current and temperature figure 2. transfer characteristics figure 1. on-region characteristics 8
z ja (t), thermal response [ o c/w] ?2001 fairchild semiconductor corporation fqt3p20 rev. c0 www.fairchildsemi.com 4 fqt3p20 ? p-channel qfet ? mosfet 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 1- 10 0 10 1 notes : 1. z (t) = 50 /w m a x. 2. duty ja f ac to r, d = t 1 /t 2 3. t jm - z* t a = p dm ja (t) s in gle pu ls e d=0.5 0.02 0.2 0.05 0.1 0.01 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 -i d , drain current [a] t c , case temperature [ ] 10 -1 10 0 10 1 10 2 10 -3 10 -2 10 -1 10 0 10 1 100 ms dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse -i d , drain current [a] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 notes : 1. v gs = -10 v 2. i d = -0.335 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = -250 a -bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] typical characteristics (continued) -v ds , drain-source voltage [v] figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 7. breakdown voltage variation vs. temperature figure 8. on-resistance variation vs. temperature t 1 , square w ave pulse duration [sec] figure 11. transient thermal response curve t 1 p dm t 2
figure 12. gate charge test circuit & waveform figure 13. resistive switching test circuit & waveforms figure 14. unclamped inductive switching test circuit & waveforms v ds v gs 10% 90% t d(on) t r t on t off t d(off) t f v dd -10v v ds r l dut r g v gs v ds v gs 10% 90% t d(on) t r t on t off t d(off) t f v dd -10v v ds r l dut r g v gs charge v gs -10v q g q gs q gd -3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs -10v q g q gs q gd -3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time -10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time -10v dut r g l l i d i d t p v gs i g = const. ?2001 fairchild semiconductor corporation fqt3p20 rev. c0 www.fairchildsemi.com 5 fqt3p20 ? p-channel qfet ? mosfet
figure 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g compliment of dut (n-channel) v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g compliment of dut (n-channel) v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- ?2001 fairchild semiconductor corporation fqt3p20 rev. c0 www.fairchildsemi.com 6 fqt3p20 ? p-channel qfet ? mosfet
mechanical dimensions dimension in millimeters sot-223 4l figure 16. molded package, sot-223, 4 lead package drawings are provided as a service to customers considering fairchild com ponents. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packag ing area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails.html?id=pn_tte23-004 fqt3p20 ? p-channel qfet ? mosfet ?2001 fairchild semiconducto r corporation fqt3p20 rev. c0 www.fairchildsemi.com 7
trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or desi gn. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchilds worldwide terms and conditio ns, specifically the warranty therein, which covers these products. life support policy fairchilds products are not authorized for use as critical components in life support de vices or systems without the express written approval of fai rchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? ax-cap ? * bitsic? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? fps? f-pfs? frfet ? global power resource sm greenbridge? green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? marking small speakers sound louder and better? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? mwsaver ? optohit? optologic ? optoplanar ? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? solutions for your success? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* tinyboost ? tinybuck ? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic? trifault detect? truecurrent ? * ? serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? ? ? datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporations anti-counterfeiting policy. fairchilds anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in the industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts exper ience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing del ays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourage s customers to purchase fairchild parts either directly from fairchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fair childs quality standards for handing and storage and provide access to fairchilds full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping this practice by buying direct or from authorized distributors. rev. i66 ? ?2001 fairchild semiconductor corporation fqt3p20 rev. c0 www.fairchildsemi.com 8 fqt3p20 ? p-channel qfet ? mosfet
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